The team is passionate about solving the power efficiency challenges standing in the way of the disruptive innovations of tomorrow with the cutting-edge gallium nitride (GaN) technology from MIT. If you share our enthusiasm for GaN technology and sustainability, we invite you to join our remarkable team. We offer a dynamic environment, great potential for personal growth and competitive compensation packages.  Equal opportunity employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, gender, gender identity or expression, sexual orientation, national origin, genetics, disability, age, or veteran status.
The individual selected for this position will work with fellow engineers on the development, modeling and characterization of advanced gallium nitride (GaN) devices.
Key Responsibilities
TCAD simulation and device compact modeling.
Perform characterization of GaN devices including DC&RF tests.
Data analysis and model extraction.
Other responsibilities will be expected as the employee grows professionally in the company.
Required Qualifications
PhD degree in electrical engineering, physics or related areas.
Strong background in device physics.
Hands-on experience in device DC and RF characterization, simulation and compact modeling.
Excellent attention to detail; Self-motivated. Possessing initiative and drive to work around technical obstacles. Strong communication skills and accountability.
Authorized to work in the United States.
We encourage candidates of all levels to apply. Salary is negotiable depending upon qualifications.
We offer a generous benefits package that includes:
401(k) matching
Health /Dental/Vision insurance/HSA
Life insurance
Paid time off
Pre-IPO Stock options

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